[19p-E14-1~21] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-E14-19] Room temperature ultrasonic bonding process for minimal wafer bonding system

^○Kazuhiro Noda¹, Seiya Nakai¹, Takanori Shuto², Keiichiro Iwanabe², Tanemasa Asano², Mutsuo Ogura³, Katsuhiko Nishida³ (adwelds¹, Kyushu Univ.², IR spec³)

Keywords:三次元,超音波接合,マイクロバンプ