Etching of atomically layer MoS<sub>2</sub>:Thickness identification by optical contrast method

Naruki Ninomiya

Presentation information

Oral presentation

17. Nanocarbon Technology » 17.2 Structural control and process

[19p-E18-1~6] 17.2 Structural control and process

Wed. Mar 19, 2014 1:15 PM - 2:45 PM E18 (E307)

2:30 PM - 2:45 PM

[19p-E18-6] Etching of atomically layer MoS₂:Thickness identification by optical contrast method

^○Naruki Ninomiya¹, Takahiro Mori², Noriyuki Uchida², Eiichiro Watanabe³, Daiju Tsuya³, Satoshi Moriyama³, Noriyuki Miyata², Tetsuji Yasuda², Masatoshi Tanaka¹, Atsushi Ando² (Yokohama National Univ.¹, AIST², NIMS³)

Keywords:MoS2,トランジスタ,エッチング

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Presentation information

[19p-E18-1~6] 17.2 Structural control and process

[19p-E18-6] Etching of atomically layer MoS2:Thickness identification by optical contrast method

[19p-E18-6] Etching of atomically layer MoS₂:Thickness identification by optical contrast method