Drastic improvement of electrical insulation in Y2O3 gate on BLG by high-pressure O2 annealing

Presentation information

Oral presentation

17. Nanocarbon Technology » 17.3 Exploration of new functions and evaluation of basic properties

Wed. Mar 19, 2014 1:15 PM - 3:30 PM E2 (E102)

1:15 PM - 1:30 PM

^○Kaoru Kanayama¹, Kousuke Nagashio¹, Tomonori Nishimura¹, Akira Toriumi¹ (Tokyo univ.¹)

Keywords:2層グラフェン,ゲート絶縁膜,高圧O2アニール