The 61st JSAP Spring Meeting, 2014

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Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[19p-E8-1~21] 6.3 Oxide-based electronics

Wed. Mar 19, 2014 1:15 PM - 6:45 PM E8 (E202)

1:15 PM - 1:30 PM

△ [19p-E8-1] Important Aspects of Resistive Transition of SiO2 Film Fabricated by Sputter Deposition

○Rintaro Yamaguchi1, Shingo Sato1, Yasuhisa Omura1, Kazuhiro Nakamura1 (Kansai Univ.1)

Keywords:ReRAM,抵抗変化メモリ,絶縁薄膜