Origin of the SET times of the Resistive Switching in Tantalum Oxide Films

Presentation information

Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

Wed. Mar 19, 2014 1:15 PM - 6:45 PM E8 (E202)

4:30 PM - 4:45 PM

^○Yoshifumi Nishi^1,2, Stephan Menzel¹, Karsten Fleck¹, Ulrich Boettger¹, Rainer Waser¹ (RWTH Aachen University¹, Toshiba R&D Center²)

Keywords:抵抗変化,酸化タンタル,TaOx