The 61st JSAP Spring Meeting, 2014

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Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[19p-E8-1~21] 6.3 Oxide-based electronics

Wed. Mar 19, 2014 1:15 PM - 6:45 PM E8 (E202)

5:30 PM - 5:45 PM

[19p-E8-17] Electric double layer transistor on beta-Ga2O3 single crystal

○Kazunori Ueno1,2, Taro Hitosugi2,3, Koji Koyama4 (Dept.Basic Sci.,Univ. Tokyo.1, JST-PRESTO2, WPI-AIMR, Tohoku Univ.3, Namiki precision jewel4)

Keywords:電気二重層トランジスタ,ワイドギャップ半導体,イオン液体