[19p-E8-1~21] 6.3 Oxide-based electronics

△ [19p-E8-4] Observation of the interfacial state of hydrogen ions migration-type ReRAM by using synchrotron radiation

^○Takeshi Notsu¹, Akihiro Hanada², Hiroki Miura¹, Satoru Kishida^1,3, Hitoshi Osawa⁴, Toshiaki Ina⁴, Motohiro Suzuki⁴, Naomi Kawamura⁴, Masaichiro Mizumaki⁴, Tomoya Uruga⁴, Yasuhiko Imai⁴, Shigeru Kimura⁴, Kentaro Kinoshita^1,3 (Tottori Univ.¹, Organization for Regional Industrial Academic Cooperation, Tottori University², Tottori Univ. Electronic Display Research Cente³, JASRI/SPring-8⁴)

Keywords:ReRAM,Bi-2212,XANES