[19p-F1-1~16] 2.1 Radiation physics and detectors

[19p-F1-16] Threshold voltage changes of thick silicon oxide film γ-ray irradiationⅡ

^○Katsumi Yoshizawa¹, Shutetsu Akiyama¹, Jun Aizawa¹, Kunihisa Ishii¹, Mashashi Otsuka², Tomonari Nakada², Atsushi Watanabe², K M³ (PioneerMTC¹, Pioneer², Tokyo City Univ³)

Keywords:放射線耐性,シリコン酸化膜,閾値電圧変化