[19p-F12-1~20] 13.4 Devices/Integration Technologies

[19p-F12-13] High performance strained GeOI nMOSFETs with in-situ doped epitaxial SiGe stressors

^○Yuuichi Kamimuta¹, Yoshihiko Moriyama¹, Eiko Mieda¹, Tatsuro Maeda¹, Jevasuwan Wipakorn¹, Yuichi Kurashima², Hideki Takagi², Minoru Oda¹, Toshifumi Irisawa¹, Keiji Ikeda¹, Etsuo Kurosawa¹, Tsutomu Tezuka¹ (GNC-AIST¹, AIST²)

Keywords:Ge,MOSFET,歪み