[19p-F12-1~20] 13.4 Devices/Integration Technologies

[19p-F12-18] Ultra-thin GeSn pMOSFETs on Si (111) by solid phase epitaxy

^○Tatsuro Maeda¹, Wipakorn Jevasuwan¹, Hiroyuki Hattori¹, Noriyuki Uchida¹, Shu Miura², Masatoshi Tanaka², Jean Locquet³, Ruben Lieten^3,4 (AIST¹, YNU², KU Leuven³, IMEC⁴)

Keywords:GeSn,固相エピタキシー