GaSb-OI p-MOSFETs on Si fabricated by direct wafer bonding technology

Masafumi Yokoyama

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

[19p-F12-1~20] 13.4 Devices/Integration Technologies

Wed. Mar 19, 2014 1:30 PM - 6:45 PM F12 (F408)

6:30 PM - 6:45 PM

[19p-F12-20] GaSb-OI p-MOSFETs on Si fabricated by direct wafer bonding technology

^○Masafumi Yokoyama¹, Koichi Nishi^1,2, Haruki Yokoyama³, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Univ. of Tokyo¹, JST CREST², NTT Photonics Labs.³)

Keywords:GaSb

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