[19p-PG2-1~12] 13.2 Insulator technology

[19p-PG2-6] DLTS Evaluation of Near-Interface Traps in Ge-MIS Structures with Aluminum-Germanate Insulator Layers Fabricated by ALD Techniques

^○Hidefumi Narita¹, Yukio Fukuda², Yohei Otani², Kosei Yanachi², Takehiro Hanada², Hiroki Ishizaki², Hiroshi Okamoto¹ (Hirosaki Univ.¹, Tokyo Univ. of Sci.²)

Keywords:Ge-MIS,DLTS