[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-21] Large grain growth of poly-GeSn by underwater laser annealing for device applications

^○Masashi Kurosawa^1,2, Hiroshi Ikenoue³, Yoshiki Kamata⁴, Noriyuki Taoka¹, Osamu Nakatsuka¹, Tsutomu Tezuka⁴, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS², Kyushu Univ.³, AIST/GNC⁴)

Keywords:GeSn,レーザーアニール,laser annealing