[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-24] Formation of epitaxial nickel monogermanide on Ge(100) by annealing Ni/Sn bilayer

^○Masahiro Koike¹, Yuuichi Kamimuta¹, Yoshihiko Moriyama¹, Yoshiki Kamata¹, Etsuo Kurosawa¹, Tsutomu Tezuka¹ (GNC, AIST¹)

Keywords:半導体,ゲルマニウム,ショットキー