[19p-PG3-1~32] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-PG3-26] Mobility Improvement of La-silicate MOSFET by W₂C Gate Electrode

^○（D）Tuokedaerhan Kamale¹, Shuhei Hosoda¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:La-silicate,tugsten carbide,mobility