[19p-PG4-1~5] 13.5 Si-English Session

▲ [19p-PG4-5] Effect of electric field on single-electron tunneling transport in dopant-atom transistors

^○（P）Arup Samanta¹, Daniel Moraru¹, Takeshi Mizuno¹, Michiharu Tabe¹ (Shizuoka University¹)

Keywords:donor atom transistor,silicon nano-FET,interface state