The 61st JSAP Spring Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20a-D3-1~11] 14.1 Physical properties of exploratory materials

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D3 (D114)

9:00 AM - 9:15 AM

▲ [20a-D3-1] Formation of B-doped BaSi2 films by RF sputtering on a heated glass substrate

○（M1）Nurul Amal AbdulLatiff1, Takahiro Yoneyama1, Masami Mesuda2, Hideto Kuramochi2, Kaoru Toko1, Takashi Suemasu1,3 (Inst. of Appl. Phys. Univ. Tsukuba1, Tosoh Corporation2, JST-CREST3)

Keywords:silicide,sputtering