Investigation of potential at grain boundaries in Sb-doped BaSi<sub>2</sub> thin-films by Kelvin probe force microscopy

Daichi Tsukahara

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20a-D3-1~11] 14.1 Physical properties of exploratory materials

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D3 (D114)

10:00 AM - 10:15 AM

[20a-D3-5] Investigation of potential at grain boundaries in Sb-doped BaSi₂ thin-films by Kelvin probe force microscopy

^○Daichi Tsukahara¹, Masakazu Baba¹, Ryouta Takabe¹, Kaoru Tokou¹, Kentarou Watanabe¹, Kousuke Hara², Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ.Tsukuba¹, Univ.Nagoya², JST-CREST³)

Keywords:粒界,シリサイド,KFM

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Presentation information

[20a-D3-1~11] 14.1 Physical properties of exploratory materials

[20a-D3-5] Investigation of potential at grain boundaries in Sb-doped BaSi2 thin-films by Kelvin probe force microscopy

[20a-D3-5] Investigation of potential at grain boundaries in Sb-doped BaSi₂ thin-films by Kelvin probe force microscopy