The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20a-D3-1~11] 14.1 Physical properties of exploratory materials

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D3 (D114)

10:45 AM - 11:00 AM

[20a-D3-7] I-V and C-V characteristics of the metal/undoped-BaSi2 Schottky diodes

Weijie Du1, Masakazu Baba1, Ryouta Takabe1, Ning Zhang1, Shintaro Koike1, Kaoru Toko1, Noritaka Usami2,3, Takashi Suemasu1,3 (Univ. of Tsukuba1, Nagoya Univ.2, JST-CREST3)

Keywords:BaSi2, Schottky junction