Enhancement of Breakdown Voltages in InP-based HEMTs with Tri-Layer Channel Structure

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D8 (D215)

11:45 AM - 12:00 PM

^○Amine El Moutaouakil¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (NTT Photonics Laboratories¹)

Keywords:HEMT, semiconductor, InP, breakdown, tri-layer