The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20a-D8-1~11] 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D8 (D215)

9:30 AM - 9:45 AM

[20a-D8-3] Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated by using Si-ion implantation

Masataka Higashiwaki1, Kohei Sasaki2,1, Wong Man Hoi1, Takafumi Kamimura1, Krishnamurthy Daivasigamani1, Akito Kuramata2, Takekazu Masui3, Shigenobu Yamakoshi2 (NICT1, Tamura Corp.2, Koha Co., Ltd.3)

Keywords:酸化ガリウム,Ga2O3,MOSFET