Electron mobility of Sn-doped and Si-implanted n-type β-Ga<sub>2</sub>O<sub>3</sub>

Man Hoi Wong

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20a-D8-1~11] 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D8 (D215)

9:45 AM - 10:00 AM

▼ [20a-D8-4] Electron mobility of Sn-doped and Si-implanted n-type β-Ga₂O₃

^○Man Hoi Wong¹, Takafumi Kamimura¹, Kohei Sasaki^2,1, Krishnamurthy Daivasigamani¹, Akito Kuramata², Takekazu Masui³, Shigenobu Yamakoshi², Masataka Higashiwaki¹ (NICT¹, Tamura Corp.², Koha Co., Ltd.³)

Keywords:gallium oxide,mobility,implantation

« Previous in this session
Next in this session »

▲

Presentation information

[20a-D8-1~11] 14.3 Electron devices and Process technology

▼ [20a-D8-4] Electron mobility of Sn-doped and Si-implanted n-type β-Ga2O3

▼ [20a-D8-4] Electron mobility of Sn-doped and Si-implanted n-type β-Ga₂O₃