[20a-D8-1~11] 14.3 Electron devices and Process technology

△ [20a-D8-9] High mobility III-V n-type and p-type field-effect transistors on a Si/SiO2 substrate

^○Kuniharu Takei^1,2, Steven Chuang², Hui Fang², Morten Madsen², Junghyo Nah², Rehan Kapadia², Ali Javey² (Osaka Prefecture University¹, University of California, Berkeley²)

Keywords:III-V族半導体,トランジスタ