[20a-E11-1~9] 14.4 Optical properties and light-emitting devices

▲ [20a-E11-9] Influence of Si-doping on the luminescence and defect evolution of AlN

^○Yujin Cho^1,2, Benjamin Dierre¹, Takashi Takeda¹, Donghyun Son², Kohsei Takahashi^1,2, Yoshiaki Kamigaki³, Kazuhiro Marumoto^2,4, Naoki Fukata¹, Naoto Hirosaki¹, Takashi Sekiguchi^1,2 (NIMS¹, Tsukuba univ², Kagawa univ³, JST⁴)

Keywords:AlN,UV,ESR