The 61st JSAP Spring Meeting, 2014

Presentation information

Print

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-E13-1~10] 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 9:00 AM - 11:45 AM E13 (E301)

9:00 AM - 9:15 AM

[20a-E13-1] Vacancy-type defect characterization of Gd-doped GaN films by positron annihilation spectroscopy

○（PC）Atsushi Yabuuchi1, Nagayasu Oshima1, Brian O'Rourke E.1, Ryoichi Suzuki1, Kenji Ito1, Sota Sano2, Kotaro Higashi2, Yi-Kai Zhou2, Shigehiko Hasegawa2 (AIST1, Osaka Univ.2)

Keywords:陽電子消滅,原子空孔,格子膨張