The 61st JSAP Spring Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-E13-1~10] 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 9:00 AM - 11:45 AM E13 (E301)

9:30 AM - 9:45 AM

[20a-E13-3] Growth of InN layer by UHV sputter epitaxy

○Yuki Kobashi1, Akiyori Tada1, Susumu Fukui1, Shunsuke Sasahara1, Shota Hiruma1, Takanori Masuda1, Hiroyuki Shinoda1, Nobuki Mutsukura1 (Tokyo Denki Univ.1)

Keywords:InN,sputter