[20a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

△ [20a-E14-9] Clarification of inducement mechanism of low electron barrier for a TiN/Ge contact (II)

^○Keisuke Yamamoto¹, Masatoshi Mitsuhara², Keisuke Hiidome³, Ryutaro Noguchi³, Minoru Nishida², Dong Wang², Hiroshi Nakashima¹ (Kyushu Univ. KASTEC¹, Kyushu Univ. I-EggS², Kyushu Univ. I-EggS³)

Keywords:Ge,SBH