The 61st JSAP Spring Meeting, 2014

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13. Semiconductors A (Silicon) » 13.5 Si-English Session

[20a-F10-1~13] 13.5 Si-English Session

Thu. Mar 20, 2014 9:00 AM - 12:30 PM F10 (F406)

9:30 AM - 9:45 AM

▲ [20a-F10-3] Improvement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat GeO2/Ge interface

○Choong Hyun Lee1,2, Tomonori Nishimura1,2, Cimang Lu1,2, Wenfeng Zhang1,2, Kosuke Nagashio1,2, Akira Toriumi1,2 (Univ. of Tokyo1, JST-CREST2)

Keywords:Ge,MOSFETs,Mobility