Significant effects of semiconductor substrate on interfacial SiO<sub>2</sub> scavenging in HfO<sub>2</sub> gate stacks through ultra-high vacuum annealing

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.5 Si-English Session

Thu. Mar 20, 2014 9:00 AM - 12:30 PM F10 (F406)

9:45 AM - 10:00 AM

^○Xiuyan Li¹, Takeaki Yajima¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

Keywords:HfO2 gate stack,SiO2 scavenging