[20a-F10-1~13] 13.5 Si-English Session

▼ [20a-F10-4] Significant effects of semiconductor substrate on interfacial SiO₂ scavenging in HfO₂ gate stacks through ultra-high vacuum annealing

^○李秀妍，矢嶋赳彬，西村知紀，長汐晃輔，鳥海明 (東大院工)

キーワード：HfO2 gate stack,SiO2 scavenging