Electron Mobility and Leakage Current in Double-gated Ge Junctionless n-MOSFETs

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.5 Si-English Session

Thu. Mar 20, 2014 9:00 AM - 12:30 PM F10 (F406)

10:15 AM - 10:30 AM

^○Shoichi Kabuyanagi^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (Univ. of Tokyo¹, JST-CREST²)

Keywords:Germanium