[20a-F12-1~13] 13.4 Devices/Integration Technologies

[20a-F12-4] Switching characteristics of Cu-MoO_x-Al₂O₃ ReRAM

^○Takahiro Hiroi¹, Akitoshi Nakane¹, Takashi Fujimoto¹, Masashi Arita¹, Yasuo Takahashi¹, Hideyuki Ando², Takashi Morie² (Graduate School of IST, Hokkaido Univ.¹, Graduate School of LSSE, Kyushu Institute of Technology²)

Keywords:ReRAM,MoO,Al