In-situ TEM observation of WO<sub>x</sub> ReRAMs with Cu Top Electrodes

Akihito Takahashi

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Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

[20a-F12-1~13] 13.4 Devices/Integration Technologies

Thu. Mar 20, 2014 9:00 AM - 12:30 PM F12 (F408)

10:15 AM - 10:30 AM

[20a-F12-6] In-situ TEM observation of WO_x ReRAMs with Cu Top Electrodes

^○Akihito Takahashi¹, Yuuki Ohno¹, Akitoshi Nakane¹, Masaki Kudo¹, Kouichi Hamada¹, Masashi Arita¹, Yasuo Takahashi¹ (Graduate School of IST, Hokkaido Univ.¹)

Keywords:ReRAM,WO,Cu

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Presentation information

[20a-F12-1~13] 13.4 Devices/Integration Technologies

[20a-F12-6] In-situ TEM observation of WOx ReRAMs with Cu Top Electrodes

[20a-F12-6] In-situ TEM observation of WO_x ReRAMs with Cu Top Electrodes