Resistive switching properties of Fe3O4 nanodots epitaxially grown on Si substrate using ultrathin SiO2 film technique

Presentation information

Oral presentation

06. Thin Films and Surfaces » 6.5 Surface physics and vacuum

Thu. Mar 20, 2014 9:30 AM - 12:00 PM F7 (F307)

10:15 AM - 10:30 AM

^○Hideki Matsui¹, Yoshiaki Nakamura^1,2, Shotaro Takeuchi¹, Akira Sakai¹ (Okasa Univ.¹, PRESTO-JST²)

Keywords:ナノドット,鉄酸化物,抵抗スイッチング