[20a-PG1-1~17] 15.4 III-V-group nitride crystals

[20a-PG1-11] Study on quality improvement of semi-polar (1-101) InGaN / GaN MQW by introducing relaxation layer on a processing Si substrate

^○Yasukazu Sone¹, Maki Kushimoto¹, Yoshio Honda¹, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Lab.²)

Keywords:GaN,半極性,Si基板