The 61st JSAP Spring Meeting, 2014

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Poster presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-PG1-1~17] 15.4 III-V-group nitride crystals

Thu. Mar 20, 2014 9:30 AM - 11:30 AM PG1 (G棟2階)

9:30 AM - 11:30 AM

[20a-PG1-17] Study of annealing effect on GaN thin films prepared by room temperature RF sputtering

Shinpei Aoto1, ○Hideyuki Toyota1, Tomoya Shibata1, Shinji Saito2, Naotaka Uchitomi1 (Nagaoka Univ. of Tech.1, Toshiba R&D center2)

Keywords:GaN,sputtering