[20a-PG1-1~17] 15.4 III-V-group nitride crystals

[20a-PG1-7] XPS analysis of carbonized Si surface using AlGaN/GaN crystal growth

^○（M2）Tatsuya Sakamoto^1,2, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Akinori Ubukata³, Takayuki Satou³, Toshiya Tabuchi³, Yoshifumi Takanashi¹ (Tokyo University of Science¹, AIST², Taiyo Nippon Sanso Corporation³)

Keywords:GaN,結晶成長