[20a-PG1-1~17] 15.4 III-V-group nitride crystals

[20a-PG1-9] Reduction of efficiency droop in InGaN LEDs on low dislocation density GaN substrate

^○（DC）Kouhei Yamashita¹, Tomohiko Sugiyama³, Makoto Iwai³, Yoshio Honda¹, Takashi Yoshino³, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center², NGK Insulator LTD.³)

Keywords:効率ドループ,低転位密度,GaN基板