[20p-D6-1~8] 6.4 New thin-film materials

[20p-D6-2] Separation between Hybrid Orientation CeO₂ Regions on Si(100) Substrates

^○Tomoyasu Inoue¹, Shigenari Shida¹ (IwakiMeisei Univ.¹)

Keywords:方位選択エピタキシャル成長,複合面方位基板,SOI