[20p-D6-1~8] 6.4 New thin-film materials

[20p-D6-8] Thickness control of the SiO_x layer of HfO₂/SiO_x/Si(100) structure by post-annealing treatment

^○Yuki Toyoshima¹, Naomi Sawamoto², Shota Taniwaki¹, Narihiro Ikeno^2,3, Yasushi Hotta^1,4, Haruhiko Yoshida^1,4, Koji Arafune^1,4, Atsushi Ogura^2,4, Shinichi Sato^1,4 (Univ. of Hyogo¹, Meiji Univ.², NIMS³, JST-CREST⁴)

Keywords:双極子,界面,Si