[20p-D8-1~8] 14.3 Electron devices and Process technology

△ [20p-D8-2] Low-turn-on-voltage HBTs with high-In-and-Sb-content InGaAsSb base

^○Takuya Hoshi¹, Norihide Kashio¹, Hiroki Sugiyama¹, Haruki Yokoyama¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹, Masaki Kohtoku¹ (NTT Photonics Labs.¹)

Keywords:インジウムガリウム砒素アンチモン,有機金属化学気相堆積,ヘテロ接合バイポーラトランジスタ