Electrical Characteristics of InP-based HBTs on SiC Substrate Bonded by Surface Activated Bonding

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Mar 20, 2014 1:00 PM - 3:00 PM D8 (D215)

1:30 PM - 1:45 PM

^○Yuta Shiratori¹, Norihide Kashio¹, Eiji Higurashi², Hideaki Matsuzaki¹ (NTT Photonics Laboratories¹, Univ. of Tokyo²)

Keywords:InP,HBT,表面活性化接合法