[20p-D8-1~8] 14.3 Electron devices and Process technology

[20p-D8-5] study of effects of roughness and dislocation scatterings on device characteristics in InSb HEMT

Sｈohei Nagai¹, Yutaro Nagai¹, Sachie Fujikawa¹, Shinsuke Hara², Akira Endoh², Issei Watanabe^1,2, Akifumi Kasamatsu², Hiroki Fujishiro¹, ^○Shota Hatsushiba¹ (Tokyo University of science¹, National Institute of Information²)

Keywords:InSb　HEMT　,ラフネス散乱,転位散乱