[20p-D8-1~8] 14.3 Electron devices and Process technology

[20p-D8-6] Analysis of Delay Time in III-V DG MOSFETs with Various Channel Materials

^○Yuki Yajima¹, Ryoko Ohama¹, Akio Nishida¹, Sachie Fujikawa¹, Hiroki Fujishiro¹ (Tokyo University of Science¹)

Keywords:III-V MOSFET,量子モンテカルロシミュレーション,遅延時間