[20p-E6-1~7] 12.3 Functional materials and novel devices

△ [20p-E6-2] Memory characteristics of gate insulator consisting of fullerene compound

^○Daiki Fujii¹, Masatoshi Uchino¹, Anri Nakajima¹ (Hiroshima Univ. RNBS¹)

Keywords:フラーレン,有機メモリ