[20p-E6-1~7] 12.3 Functional materials and novel devices

[20p-E6-3] Basic Study on THz-wave Sensors Using OFET Structures (II): Analysis of Gate-Field-Modulated Absorption Spectra Using the FDTD Method

Tomoya Ueda¹, Shi-Guang Li^1,2, Katsuyuki Fujii³, Hirotaka Kojima¹, Ryosuke Matsubara¹, ^○Masakazu Nakamura¹ (NAIST¹, Xi'an Univ. Technol.², Nanzan Univ.³)

Keywords:THz波,有機トランジスタ,FDTDシミュレーション