Current-induced switching properties under perpendicular magnetic field in magnetic tunnel junctions with perpendicular magnetic easy axis

Han Jang

Presentation information

Oral presentation

10. Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[20p-E7-1~7] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Thu. Mar 20, 2014 1:15 PM - 3:00 PM E7 (E201)

2:15 PM - 2:30 PM

▼ [20p-E7-5] Current-induced switching properties under perpendicular magnetic field in magnetic tunnel junctions with perpendicular magnetic easy axis

^○Han Jang¹, Enobio Eli Christopher², Hideo Sato², Shinya Ishikawa¹, Michihiko Yamanouchi^1,2, Shoji Ikeda^1,2,4, Shunske Fukami², Fumihiro Matsukura^1,2,3, Hideo Ohno^1,2,3,4 (Laboratory for Nanoelectronics and Spintronics,Riec,Tohoku Univ.¹, CSIS, Tohoku Univ.², WPI-AIMR, Tohoku Univ.³, CIES, Tohoku Univ.⁴)

Keywords:磁気トンネル接合