Oral presentation

3 Optics and Photonics » 3.15 Silicon photonics

[14a-2N-1~11] 3.15 Silicon photonics

Mon. Sep 14, 2015 9:15 AM - 12:15 PM 2N (224-2(North))

座長:臼杵達哉(PETRA),竹中充(東大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

[14a-2N-1] Novel Current Amplifier Device composed of only Light-Emitting Diode and Si Solar Cell

〇Kensho Okamoto¹, Nobuhito Kuroda¹ (1.LBC CO., LTD.)

9:30 AM - 9:45 AM

▲ [14a-2N-2] Photoluminescence in Si/SiO₂ Single Quantum Wells

〇(B)Cassia Azevedo¹, Yuki Miyata¹, Yasunori Nakamukai¹, Yasushi Osikane¹, Kentaro Kawai¹, Kenta Arima¹, Mizuho Morita¹ (1.Osaka Univ.)

9:45 AM - 10:00 AM

▲ [14a-2N-3] Demonstration of Ge Waveguide on Ge-on-Insulator Substrate
for Mid-Infrared Photonics

〇(D)Jian Kang^1,2, Xiao Yu^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.Tokyo Univ., 2.JST-CREST)

10:00 AM - 10:15 AM

[14a-2N-4] High-Q resonant photoluminescence from Ge on Insulator(GOI) microdisk

〇hideaki hashimoto¹, xuejun xu¹, kentarou sawano¹, takuya maruizumi¹ (1.Tokyo City Univ.)

10:15 AM - 10:30 AM

[14a-2N-5] Enhancement of biaxial tensile strain using suspended germanium cross-shaped structures

〇Satomi Ishida¹, Satoshi Kako^1,2, Katsuya Oda³, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS RCAST U-Tokyo, 2.NanoQuine U-Tokyo, 3.Hitachi R&D Group)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

△ [14a-2N-6] Optical Propagation characteristics of n-doped Germanium Waveguides

〇Tadashi Okumura¹, Katsuya Oda¹, Junichi Kasai¹, Misuzu Sagawa¹, Yuji Suwa¹ (1.Hitachi R&D Group)

11:00 AM - 11:15 AM

[14a-2N-7] Evaluation of ambipolar diffusion coefficient of Ge grown on Si by time-resolved photoluminescence

〇Satoshi Kako^1,2, Satomi Ishida¹, Katsuya Oda³, Yasuhiko Arakawa^1,2 (1.IIS/RCAST, Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo, 3.Hitachi R&D Group)

11:15 AM - 11:30 AM

[14a-2N-8] Optical spin injection to the direct edge of Ge studied by circular-polarized PLE

〇Yuhsuke Yasutake^1,2, Takeshi Tayagaki^3,4, Yohei Okawa¹, Hiroyuki Yaguchi⁵, Yoshihiko Kanemitsu³, Susumu Fukatsu¹ (1.Univ. of Tokyo, 2.JST-PRESTO, 3.ICR, Kyoto Univ., 4.AIST, 5.Saitama Univ.)

11:30 AM - 11:45 AM

[14a-2N-9] Butt-Joint Ge-PIN-PD for GE-PON Transceivers

〇Hideki Ono¹, Takasi Simoyama¹, Shigekazu Okumura¹, Masahiko Imai¹, Hiroki Yaegashi¹ (1.PETRA)

11:45 AM - 12:00 PM

[14a-2N-10] Enhancement of Ge lateral overgrowth over SiO₂ mask

〇(M2)Motoki Yako¹, Yasutaka Mizuno¹, Naoyuki Kawai¹, Kazumi Wada¹ (1.The Univ. of Tokyo)

12:00 PM - 12:15 PM

[14a-2N-11] Low dark current Ge photodetector with selectively grown Si capping layer

〇Shigekazu Okumura¹, Keizo Kinoshita¹, Junichi Fujikata¹, Takasi Simoyama¹, Hideki Ono¹, Yu Tanaka¹, Ken Morito¹, Tsuyoshi Horikawa¹, Tohru Mogami¹ (1.PETRA)

Session information

[14a-2N-1~11] 3.15 Silicon photonics

[14a-2N-1] Novel Current Amplifier Device composed of only Light-Emitting Diode and Si Solar Cell

▲ [14a-2N-2] Photoluminescence in Si/SiO₂ Single Quantum Wells

▲ [14a-2N-3] Demonstration of Ge Waveguide on Ge-on-Insulator Substrate
for Mid-Infrared Photonics

[14a-2N-4] High-Q resonant photoluminescence from Ge on Insulator(GOI) microdisk

[14a-2N-5] Enhancement of biaxial tensile strain using suspended germanium cross-shaped structures

△ [14a-2N-6] Optical Propagation characteristics of n-doped Germanium Waveguides

[14a-2N-7] Evaluation of ambipolar diffusion coefficient of Ge grown on Si by time-resolved photoluminescence

[14a-2N-8] Optical spin injection to the direct edge of Ge studied by circular-polarized PLE

[14a-2N-9] Butt-Joint Ge-PIN-PD for GE-PON Transceivers

[14a-2N-10] Enhancement of Ge lateral overgrowth over SiO₂ mask

[14a-2N-11] Low dark current Ge photodetector with selectively grown Si capping layer

Authentication

Session information

[14a-2N-1~11] 3.15 Silicon photonics

▲ [14a-2N-2] Photoluminescence in Si/SiO2 Single Quantum Wells

▲ [14a-2N-3] Demonstration of Ge Waveguide on Ge-on-Insulator Substratefor Mid-Infrared Photonics

△ [14a-2N-6] Optical Propagation characteristics of n-doped Germanium Waveguides

Authentication

▲ [14a-2N-2] Photoluminescence in Si/SiO₂ Single Quantum Wells

▲ [14a-2N-3] Demonstration of Ge Waveguide on Ge-on-Insulator Substrate
for Mid-Infrared Photonics