Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[14p-2H-1~15] 6.3 Oxide electronics

Mon. Sep 14, 2015 1:45 PM - 5:45 PM 2H (222)

座長:吉松公平(東工大),打田正輝(東大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

[14p-2H-1] [Young Scientist Presentation Award Speech] Anomalous and Topological Hall Effects in Eu_1-xLa_xTiO₃ films of Diluted Carrier

〇Tomoki Murata¹, Kei Takahashi², Masaki Uchida¹, Yusuke Kozuka¹, Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (1.Univ. of Tokyo, 2.RIKEN CEMS)

2:00 PM - 2:15 PM

[14p-2H-2] Interface-driven topological Hall effect in SrIrO₃-SrRuO₃ bilayer

〇Jobu Matsuno¹, Naoki Ogawa¹, Masashi Kawasaki^1,2, Yoshinori Tokura^1,2 (1.RIKEN CEMS, 2.Univ. of Tokyo)

2:15 PM - 2:30 PM

[14p-2H-3] Lattice Distortion Effect on Magnetic Domain Formation in Pyrochlore Iridate Films

〇(D)Takahiro Fujita¹, Shohei Ogawa¹, Masaki Uchida¹, Yusuke Kozuka¹, Masashi Kawasaki^1,2 (1.the Univ. of Tokyo, 2.CEMS, RIKEN)

2:30 PM - 2:45 PM

[14p-2H-4] Formation of Si:α-Fe₂O₃ Thin Films by Two-step Pulsed Laser Deposition and Control of Their Elctrical and Magnetic Properties

〇Munetoshi Seki¹, Takeshi Ishida¹, Hidekazu Nasu¹, Ameya Sathe¹, Tetsuya Murata¹, Shunsuke Kawabe¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

2:45 PM - 3:00 PM

[14p-2H-5] Electrical- and magneto-conductive properties in Fe₃O₄thin films on thermally oxidized Si substrates produced by rapid thermal deoxidation method

〇Akihisa Fujita¹, Hiromi Kobori¹, Atsushi Yamasaki¹, Toshifumi Taniguchi², Tetsuo Shimizu³ (1.Konan Univ, 2.Osaka Univ, 3.AIST)

3:00 PM - 3:15 PM

[14p-2H-6] Spin-glass behaviors of LuFe_5-2xCo_xSi_xO₁₂garnet thin films

〇Hiroyasu Yamahara¹, Hidekazu Nasu¹, Tetsuya Murata¹, Masaki Adachi¹, Munetoshi Seki¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

3:15 PM - 3:30 PM

[14p-2H-7] Lattice strain effect and magnetic properties of Nd₃Fe₅O₁₂garnet thin films

〇Hidekazu Nasu¹, Masaki Adachi¹, Hiroyasu Yamahara¹, Munetoshi Seki¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

3:30 PM - 3:45 PM

[14p-2H-8] First-principle calculation on the doping site and its relation to the metallic conductivity in H-doped SrFeO₂ system

〇Yuji Kurauchi¹, Hideyuki Kamisaka^1,2, Tsukasa Katayama¹, Akira Chikamatsu^1,2, Tetsuya Hasegawa^1,2,3 (1.Tokyo Univ., 2.JST-CREST, 3.KAST)

Break (3:45 PM - 4:00 PM)

4:00 PM - 4:15 PM

[14p-2H-9] Kinetics of spinodal decomposition in the TiO₂-VO₂system
The effect of aliovalent (Al³⁺,Nb⁵⁺) doping

〇makoto ogata¹, Yuji Muraoka¹, Takayoshi Yokoya¹ (1.Okayama Univ.)

4:15 PM - 4:30 PM

[14p-2H-10] Phase transition properties and c/a ratio in pulsed laser-deposited V₂O₃ thin films

〇Joe Sakai¹, Patrice Limelette¹, Hiroshi Funakubo² (1.GREMAN, Univ. Tours, 2.Tokyo Tech)

4:30 PM - 4:45 PM

[14p-2H-11] Electric field-induced transport modulation in VO₂ nano-wire channels using a planer-type gate

〇(M1)Masashi Chikanari¹, Teruo Kanki¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ.)

4:45 PM - 5:00 PM

▲ [14p-2H-12] Electric-field induced transport modulation in VO₂ FETs with organic parylene-C/high-k oxide hybrid gate dielectric

〇TINGTING WEI^1,2, Teruo Kanki¹, Kohei Fujiwara³, Hidekazu Tanaka¹ (1.Osaka Univ., 2.Kunming Sci Tech Univ., 3.Tohoku Univ.)

5:00 PM - 5:15 PM

[14p-2H-13] Time Response of VO₂ Channel Transistors to Gate Voltage Application

〇Takeaki Yajima^1,2, Tomonori Nishimura^1,2, Akira Toriumi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

5:15 PM - 5:30 PM

[14p-2H-14] A-site driven ferroelectric ferromagnet: strained La₂NiMnO₆

〇Ryota Takahashi¹, Isao Ohkubo^1,2, Kunihiko Yamauchi³, Miho Kitamura¹, Yasunari Sakurai¹, Masaharu Oshima¹, Tamio Oguchi^3,4, Yasuo Cho⁵, Mikk Lippmaa¹ (1.Univ. Tokyo, 2.NIMS, 3.Osaka Univ., 4.JST-CREST, 5.Tohoku Univ.)

5:30 PM - 5:45 PM

[14p-2H-15] Fabrication and electronic states analysis of ordered SrRu_0.5Cr_0.5O₃ epitaxial thin films

〇keisuke yamada¹, Akira Chikamatsu^1,2, Kei Shigematsu^2,3, Makoto Minohara⁴, Hiroshi Kumigashira⁴, Tetsuya Hasegawa^1,2,3 (1.Univ. of Tokyo, 2.JST-CREST, 3.KAST, 4.KEK-IMSS)

Session information

[14p-2H-1~15] 6.3 Oxide electronics

[14p-2H-1] [Young Scientist Presentation Award Speech] Anomalous and Topological Hall Effects in Eu_1-xLa_xTiO₃ films of Diluted Carrier

[14p-2H-2] Interface-driven topological Hall effect in SrIrO₃-SrRuO₃ bilayer

[14p-2H-3] Lattice Distortion Effect on Magnetic Domain Formation in Pyrochlore Iridate Films

[14p-2H-4] Formation of Si:α-Fe₂O₃ Thin Films by Two-step Pulsed Laser Deposition and Control of Their Elctrical and Magnetic Properties

[14p-2H-5] Electrical- and magneto-conductive properties in Fe₃O₄thin films on thermally oxidized Si substrates produced by rapid thermal deoxidation method

[14p-2H-6] Spin-glass behaviors of LuFe_5-2xCo_xSi_xO₁₂garnet thin films

[14p-2H-7] Lattice strain effect and magnetic properties of Nd₃Fe₅O₁₂garnet thin films

[14p-2H-8] First-principle calculation on the doping site and its relation to the metallic conductivity in H-doped SrFeO₂ system

[14p-2H-9] Kinetics of spinodal decomposition in the TiO₂-VO₂system
The effect of aliovalent (Al³⁺,Nb⁵⁺) doping

[14p-2H-10] Phase transition properties and c/a ratio in pulsed laser-deposited V₂O₃ thin films

[14p-2H-11] Electric field-induced transport modulation in VO₂ nano-wire channels using a planer-type gate

▲ [14p-2H-12] Electric-field induced transport modulation in VO₂ FETs with organic parylene-C/high-k oxide hybrid gate dielectric

[14p-2H-13] Time Response of VO₂ Channel Transistors to Gate Voltage Application

[14p-2H-14] A-site driven ferroelectric ferromagnet: strained La₂NiMnO₆

[14p-2H-15] Fabrication and electronic states analysis of ordered SrRu_0.5Cr_0.5O₃ epitaxial thin films

Authentication

Session information

[14p-2H-1~15] 6.3 Oxide electronics

▲ [14p-2H-12] Electric-field induced transport modulation in VO2 FETs with organic parylene-C/high-k oxide hybrid gate dielectric

Authentication

▲ [14p-2H-12] Electric-field induced transport modulation in VO₂ FETs with organic parylene-C/high-k oxide hybrid gate dielectric