Session information

Oral presentation

10 Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[14p-2J-1~4] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Mon. Sep 14, 2015 1:45 PM - 2:45 PM 2J (223)

座長:後藤穣(阪大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

▼ [14p-2J-1] Temperature dependence of spin-dependent tunneling conductance for the parallel configuration of Co₂MnSi MTJs with high spin polarization

〇(D)Bing Hu¹, Kidist Moges¹, Hongxi Liu¹, Yusuke Honda¹, Tetsuya Uemura¹, Masafumi Yamamoto¹ (1.Grad. School of Science and Technology, Hokkaido Univ.)

2:00 PM - 2:15 PM

▼ [14p-2J-2] CPP-GMR devices using Co₂Fe(Ga_0.5Ge_0.5) full Heusler alloy and a AgZn alloy spacer

〇(D)YE DU^1,2, Takao Furubayashi¹, Taisuke Sasaki¹, Yuya Sakuraba¹, Yukiko Takahashi¹, Kazuhiro Hono^1,2 (1.NIMS, 2.Univ. Tsukuba)

2:15 PM - 2:30 PM

[14p-2J-3] Preparation of full-epitaxial magnetic tunneling junctions with a Mn₃Ge top electrode

〇Atsushi Sugihara¹, Kazuya Suzuki¹, Terunobu Miyazaki¹, Shigemi Mizukami¹ (1.WPI-AIMR, Tohoku Univ.)

2:30 PM - 2:45 PM

▲ [14p-2J-4] Fabrication of Magnetic Tunnel Junctions with superparamagnetic CoFeB free layer

〇Kyohei Ishikawa¹, Oogane Mikihiko¹, Fujiwara Kosuke¹, Naganuma Hiroshi¹, Ando Yasuo¹ (1.Tohoku Univ.)

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